SK hynix has set a new benchmark in the memory industry by unveiling the first-ever 16Gb DDR5 chip built with its pioneering 1c process technology. This breakthrough, achieved using the sixth generation of 10nm technology, marks a significant leap forward in DRAM development.
With each new generation of 10nm technology, DRAM design complexity increases and memory density soars. SK hynix’s 1c technology surmounts these challenges, offering a dramatic boost in productivity and cost-efficiency. This cutting-edge tech, initially applied to DDR5 memory, will eventually extend to other memory types such as HBM, LPDDR6, and GDDR7.
Kim Jonghwan, head of DRAM development at SK hynix, emphasized the company’s commitment to maintaining its DRAM leadership and solidifying its role as a trusted provider of AI memory solutions. “We will continue to push the envelope in DRAM innovation and uphold our position as the leading provider of advanced memory technologies,” Kim stated.
Scheduled for mass production within a year, the 1c DDR5 chips will start rolling out in 2025. SK hynix has achieved a remarkable 30% increase in productivity through the adoption of new materials for its EUV equipment and a redesign of the component architecture.
These next-generation DDR5 chips will deliver speeds up to 8 Gbps, an 11% increase over previous models, and boast improved power efficiency, with a reduction of more than 9% in energy consumption. This advancement is particularly crucial as data centers and AI systems demand ever-greater performance while striving to reduce energy costs. According to SK hynix, the new memory technology could cut data center energy expenses by up to 30%.
The introduction of these chips signifies not just a technological milestone but also a significant step towards more efficient and powerful memory solutions in the age of AI and high-performance computing.
Source: